Agilent has announced the availability of a GaAs RFIC diode, and a number of single and double of Schottky-barrier type and PIN diodes in the new miniaturised electronics MiniPak package.

Designed for wireless telephones and for ISM band applications, the MiniPak package, 0.7 mm high and overall dimensions of just 1.75 mm, is smaller than 60 % of the standard industrial package SC-70.

GaAs RFIC, MGA725M4, is a high-performing amplifier of "low-noise" (LNA) type with a switch bypass. The diodes are available in single and double version, and features combine with the diodes to give consistent performance. Production techniques ensure that the diodes packaged in couples are taken from sites adjacent to the wafer, ensuring the highest degree of union.

The MiniPak configuration is further proof of Agilent’s ability in producing and making high quality and volume innovations of RF products. LoMGA-725M4 LNA is characterised by a noise degree of 1.5 dB, increase of 14.4 dB, and 1P3 Input of  ~10.5 dBm, all with a bias of 3 V, 20 mA to 2 GHz. This product has already had great success in SC-70 telecom applications.

The HMPS-282x series of the Schottky-barrier diodes (with a low turn-on voltage such as 0.34 Vai mA) provides the highest available performance, with applications in the mixing, in perception, in switching, in sampling, in clamping in the formation of frequency waves up to 6 GHz.

The HMPP-386x series of generic PIN diodes is planned for dimmers, where energy consumption is the most important factor in the project; for RF switching, where a low capacity with a no reverse bias is the designer’s essential problem. The HMPP-389x series of switch RF PIN diodes is optimised for switching applications where low resistance in low voltage is required, together with a low capacity.